BSS308PEH6327 Novus et originalis Integratus Circuitus electronicarum partium BSS308PE
Specifications
| Productum attributum | Precium attributum |
| Fabrica: | Infineon |
| Product Category: | MOSFET |
| RoHS: | Singula |
| Technologia: | Si |
| Adscendens Style: | SMD/SMT |
| Sarcina / Causa: | SOT-23-3 |
| Transistor Polarity: | P-Channel |
| Numerus canalium: | 1 Channel |
| Vds - Drain-Source Naufragii intentione: | 30 V |
| Id - Continua Exhaurire Current: | 2 A |
| Rds De - Drain-Source Resistentia: | 62 mOhms |
| Vgs - Porta-Source intentione: | - 20 V, + 20 V |
| Vgs th. | 2 V |
| Qg - porta præcipe: | 5 nC |
| Minimum Operating Temperature: | - 55 C |
| Maximum Operating Temperature: | + 150 C |
| Pd - Potentia dissipatio: | 500 mW |
| Channel Modus: | Enhancement |
| Quid: | AEC-Q101 |
| Packaging: | Reel |
| Packaging: | Cut Tape |
| Packaging: | MouseReel |
| Notam: | Infineon Technologies |
| Configurationis: | Unius |
| Fall tempus: | 2.8 ns |
| Transconductance - Min: | 4.6 S |
| Height: | 1.1 mm |
| Longitudo; | 2.9 mm |
| Product Type: | MOSFET |
| Tempus surge: | 7.7 ns |
| Series: | BSS308 |
| Factory Pack Quantity: | 9000 |
| Subcategoria: | MOSFETs |
| Transistor Type: | 1 P-Channel |
| Typical Turn-Off mora Tempus: | 15.3 ns |
| Typical Turn-De mora Tempus: | 5.6 ns |
| Latitudo: | 1.3 mm |
| Pars # Aliases: | BSS38PEH6327XT SP000928942 BSS308PEH6327XTSA1 |
| Unitas pondus: | 8 mg |
BSS308PE
Infineon technologiae automotives et industriales artifices latum librarium N- et P-Channel parvi signum MOSFETs dant, qui summas qualitates requisita in bene notis industriarum fasciculis signantibus occurrentes et excedunt.Singulares gradus firmitatis et capacitatis fabricandi haec elementa idealiter apta sunt pro varietate applicationum in quibus DUCTUS ILLUMINATIO, ADAS, corpus dicionis unitatum, SMPS et imperium motoris.
Summarium Features
Modus amplificationis
Logica gradu
Avalanche rated
Fast commutatione
Dv/dt rated
PB libero plumbum-plating
RoHS facilis, Halogen-liber
Secundum quid secundum automotiva signa
PPAP capax
Beneficia
Low RDS (on) praebet altiorem efficientiam et extendit altilium vita
Parva sarcina nisi PCB spatium
Optimus-in-genus qualis et fides
Potentia Applications
Automotive
Lucendi
Pugna procuratio
Onus switch
DC-DC
eMobility
Motor imperium
Onboard patina
Telecom
Para-metrics
| Para-metrics | BSS308PE |
| Budgetary Price €/1k | 0.07 |
| Ciss | 376 pF |
| Coss | 196 pF |
| ID (@25°C) max | 2 A |
| IDpuls max | -8 A |
| Temperature min | -55 °C;150 °C |
| Ptot max | 0.5 W |
| sarcina | SOT-23 |
| Verticitas | P |
| QG (typ @10V) | -5 nC |
| RDS (on) (@10V) max | 80 mΩ |
| Rth | 250 K/W |
| Features speciales | Parvum signum |
| VDS max | -30 V |
| VGS(th) min max | -2 V -1 V |
