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BSS308PEH6327 Novus et originalis Integratus Circuitus electronicarum partium BSS308PE

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Product Detail

Product Tags

Specifications

Productum attributum Precium attributum
Fabrica: Infineon
Product Category: MOSFET
RoHS:  Singula
Technologia: Si
Adscendens Style: SMD/SMT
Sarcina / Causa: SOT-23-3
Transistor Polarity: P-Channel
Numerus canalium: 1 Channel
Vds - Drain-Source Naufragii intentione: 30 V
Id - Continua Exhaurire Current: 2 A
Rds De - Drain-Source Resistentia: 62 mOhms
Vgs - Porta-Source intentione: - 20 V, + 20 V
Vgs th. 2 V
Qg - porta præcipe: 5 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Pd - Potentia dissipatio: 500 mW
Channel Modus: Enhancement
Quid: AEC-Q101
Packaging: Reel
Packaging: Cut Tape
Packaging: MouseReel
Notam: Infineon Technologies
Configurationis: Unius
Fall tempus: 2.8 ns
Transconductance - Min: 4.6 S
Height: 1.1 mm
Longitudo; 2.9 mm
Product Type: MOSFET
Tempus surge: 7.7 ns
Series: BSS308
Factory Pack Quantity: 9000
Subcategoria: MOSFETs
Transistor Type: 1 P-Channel
Typical Turn-Off mora Tempus: 15.3 ns
Typical Turn-De mora Tempus: 5.6 ns
Latitudo: 1.3 mm
Pars # Aliases: BSS38PEH6327XT SP000928942 BSS308PEH6327XTSA1
Unitas pondus: 8 mg

BSS308PE
Infineon technologiae automotives et industriales artifices latum librarium N- et P-Channel parvi signum MOSFETs dant, qui summas qualitates requisita in bene notis industriarum fasciculis signantibus occurrentes et excedunt.Singulares gradus firmitatis et capacitatis fabricandi haec elementa idealiter apta sunt pro varietate applicationum in quibus DUCTUS ILLUMINATIO, ADAS, corpus dicionis unitatum, SMPS et imperium motoris.
Summarium Features
Modus amplificationis
Logica gradu
Avalanche rated
Fast commutatione
Dv/dt rated
PB libero plumbum-plating
RoHS facilis, Halogen-liber
Secundum quid secundum automotiva signa
PPAP capax
Beneficia
Low RDS (on) praebet altiorem efficientiam et extendit altilium vita
Parva sarcina nisi PCB spatium
Optimus-in-genus qualis et fides
Potentia Applications
Automotive
Lucendi
Pugna procuratio
Onus switch
DC-DC
eMobility
Motor imperium
Onboard patina
Telecom
Para-metrics

Para-metrics BSS308PE
Budgetary Price €/1k 0.07
Ciss 376 pF
Coss 196 pF
ID (@25°C) max 2 A
IDpuls max -8 A
Temperature min -55 °C;150 °C
Ptot max 0.5 W
sarcina SOT-23
Verticitas P
QG (typ @10V) -5 nC
RDS (on) (@10V) max 80 mΩ
Rth 250 K/W
Features speciales Parvum signum
VDS max -30 V
VGS(th) min max -2 V -1 V

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