AQX IRF7416TRPBF Nova et originalia integrata Circuitus ic chip IRF7416TRPBF
Product attributa
| EXEMPLUM | DESCRIPTIO |
| Categoria | Discrete Semiconductor Products |
| Mfr | Infineon Technologies |
| Series | HEXfET® |
| sarcina | Tape & Reel (TR) Cut Tape (CT) Digi-Reel® |
| Product Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Exhaurire ad Source intentione (Vdss) | 30 V |
| Current - Continuus Exhaurire (Id) @ 25°C | 10A (Ta); |
| Coegi intentione (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 5.6A, 10V |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Porta Praecipe (Qg) (Max) @ Vgs | 92 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1700 pF @ 25 V |
| FET Feature | - |
| Potentia dissipatio (Max) | 2.5W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Adscendens Type | Superficie montis |
| Elit Fabrica Package | 8-SO |
| Sarcina / Case | 8-SOIC (0.154″, 3.90mm Latitudo) |
| Basis Product Number | IRF7416 |
Documenta & Media
| RESOURCE EXEMPLUM | LINK |
| Datasheets | IRF7416PbF |
| Alia documenta Related | IR Part Numbering System |
| Product Training Modules | Princeps intentione Integrated Circuitus (HVIC Gate Coegi) |
| Featured Product | Data Processing Systems |
| HTML Datasheet | IRF7416PbF |
| EDA exemplum | IRF7416TRPBF by Ultra Librarian |
| Simulatio exemplum | IRF7416PBF Saber Model |
Environmental & Import Classifications
| TRIBUO | DESCRIPTIO |
| RoHS Status | ROHS3 Compliant |
| Humorem Sensitivity Level (MSL) | 1 (Unlimited) ; |
| SPATIUM Status | SPATIUM Unaffected |
| ECCN | EAR99 |
| HTSUS | 8541.29.0095 |
Additional Resources
| TRIBUO | DESCRIPTIO |
| Alia Nomina | IRF7416TRPBFDKR SP001554262 IRF7416TRPBFCT IRF7416TRPBF-ND IRF7416TRPBFTR |
| Latin Package | 4,000 |
IRF7416
Beneficia
Structuram cellularum planarum pro latitudine SOA
Optimized enim largissima distributione sociis
Product secundum JEDEC vexillum
Pii optimized pro applicationibus commutatione infra <100KHz
Industria vexillum superficies-montis potentia sarcina
Potest fluctus solidatae
-30V Single P-channel HEXFET Power MOSFET in SO-VIII sarcina
Beneficia
RoHS Compliant
Low RDS (on)
Industria ducens species
Dynamic dv/dt Rating
Fast Switching
Plene NIVIS Rated
175°C
P-Channel MOSFET
Transistor
transitor asemiconductor fabricaad *amplificareor *switchelectrica significationibus etpotentia.transistor unus e fundamentalibus aedificiis cuneos modernorumelectronics.[1]Componitur exsemiconductor materialisPlerumque cum tribus saltemterminalspro connexione ad circulum electronicum.Avoltageor *currentuni par terminales transistoris applicatum currentem per alterum par terminalis moderatur.Quia potestas moderata potest esse altior quam potestas moderatrix, transistor signum ampliare potest.Nonnulli transistores singillatim sarcinati sunt, sed multi plures inclusi reperiunturintegrated circuitus.
Austro-Hungarica physicus Iulius Edgar Lilienfeldconceptum proposuit a *ager effectus transistoranno 1926, sed tunc temporis artificium operantem efficere non potuit.[2]Primum opus fabrica aedificanda eratpunctum-contactus transistorinvented in MCMXLVII by American PhysiciIoannes BardeenetGualterus Brattaindum opus inGulielmus ShockleyatCampana Labs.Tres communicaverunt 1956 .Praemium Nobelianum Physicorumpro rebus gestis.[3]Maxime late genus transistor estmetallo-oxydatum semiconductor agri-effectus transistor(MOSFET), quae inventa est aMohamed AtallaetDawon Kahngapud Bell Labs in 1959 .[4][5][6]Transistores agrum electronicum vertiverunt et viam minoribus et vilioribus straveruntradios,calculatores, etcomputers, inter alia.
Maxime transistores fiunt ex purissimisPiiet quidam egermanium, sed quaedam alia interdum adhibentur semiconductoria materiae.Transistor unum tantum crimen potest habere tabellarium in agro effectus transistoris, vel duplex onerariis in onerariis habere potest.bipolar confluentes transistorcogitationes.Comparari cumvacuum tubetransitores plerumque minores sunt, et ad operandum minus requirunt potestatem.Quaedam tubulae vacui utilitates habent in transistoribus ad frequentias altissimas operandas vel ad altas voltatas operandas.Multa genera transistorum fiunt ad normas factas per plures artifices.
