Merrill chip New & Original in stock electronic components integralis Circuitus IC IRFB4110PBF
Product attributa
| EXEMPLUM | DESCRIPTIO |
| Categoria | Discrete Semiconductor Products |
| Mfr | Infineon Technologies |
| Series | HEXfET® |
| sarcina | Tubus |
| Product Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Exhaurire ad Source intentione (Vdss) | 100 V |
| Current - Continuus Exhaurire (Id) @ 25°C | 120A (Tc). |
| Coegi intentione (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 4.5mOhm @ 75A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Porta Praecipe (Qg) (Max) @ Vgs | 210 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 9620 pF |
| FET Feature | - |
| Potentia dissipatio (Max) | 370W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Adscendens Type | per foramen |
| Elit Fabrica Package | TO-220AB |
| Sarcina / Case | TO-220-3 |
| Basis Product Number | IRFB4110 |
Documenta & Media
| RESOURCE EXEMPLUM | LINK |
| Datasheets | IRFB4110PbF |
| Alia documenta Related | IR Part Numbering System |
| Product Training Modules | Princeps intentione Integrated Circuitus (HVIC Gate Coegi) |
| Featured Product | Robotics et Automated Vehiculis ductu (AGV) |
| HTML Datasheet | IRFB4110PbF |
| EDA exemplum | IRFB4110PBF by SnapEDA |
| Simulatio exemplum | IRFB4110PBF Saber Model |
Environmental & Import Classifications
| TRIBUO | DESCRIPTIO |
| RoHS Status | ROHS3 Compliant |
| Humorem Sensitivity Level (MSL) | 1 (Unlimited) ; |
| SPATIUM Status | SPATIUM Unaffected |
| ECCN | EAR99 |
| HTSUS | 8541.29.0095 |
Additional Resources
| TRIBUO | DESCRIPTIO |
| Alia Nomina | 64-0076PBF-ND 64-0076PBF SP001570598 |
| Latin Package | 50 |
Fortis IRFET™ potentia MOSFET familia optimized est pro humilis RDS(on) et alta vena capacitas.Cogitationes sunt ideales applicationes frequentiae humilium ad effectum et asperitatem requirunt.Portfolio comprehensiva latum amplitudinem applicationum appellat ad motores DC, systemata altilium, inverters et DC-DC converters.
Summarium Features
Industria vexillum per-foraminis potentia sarcina
Summus current rating
Product secundum JEDEC vexillum
Pii optimized pro applicationibus commutatione infra <100 kHz
Mollior corpore-diode comparatur ad generationem Pii prioris
Lata portfolio praesto
Beneficia
Latin pinout concedit pro gutta in replacement
Summus vena portandi facultatem sarcina
Vexillum industria absolute gradu
Princeps perficientur in low frequency applications
Augeri density potentia
Designers flexibilitatem praebet in eligendo meliorem machinam suam applicationem
Para-metrics
| Parametris | IRFB4110 |
| Budgetary Price €/1k | 1.99 |
| ID (@25°C) max | 180 A |
| Adscendens | THT |
| Temperature min max | -55 °F 175 °C |
| Ptot max | 370 W |
| sarcina | TO-220 |
| Verticitas | N |
| QG (typ @10V) | 150 nC |
| Qgd | 43 nC |
| RDS (on) (@10V) max | 4.5 mΩ |
| RthJC max | 0.4 K/W |
| Tj max | 175 °C |
| VDS max | 100 V |
| VGS(th) min max | 3 V 2 V 4 V |
| VGS max | 20 V |
Discrete Semiconductor Products
Productorum discretorum semiconductorum singulos transistores, diodes, thyristores comprehendunt, nec non parvas vestes ex duobus, tribus, quatuor, vel aliquibus aliis exiguis similium machinis intra unam sarcinam.Plerumque adhibentur ad gyros construendos cum magna intentione vel accentus current, vel ad functiones circa functiones fundamentales cognoscendas.
