IPD042P03L3G BTS5215LAUMA1 IC Chip New Electronic Component

Description:

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Product Detail

Product Tags

IPD042P03L3 G
P-cannel amplificationis modus agri-Effecti Transistor (FET), -30 V, D-PAK
Infineon maxime eget porttitor Opti MOS familias p-canalem potestatem MOSFETs includunt.Haec producta constanter in summa qualitate et observantia postulat in praecipuis specificationibus pro potentia systematis designandi sicut in statu resistentiae et notae meritorum.

Summarium Features
Modus amplificationis
Logica gradu
Avalanche rated
Fast commutatione
Dv/dt rated
PB libero plumbum-plating
RoHS facilis, Halogen-liber
Secundum AEC Q101
Potentia Applications
Potestas Management functiones
Motor imperium
Ad tabulam patina
DC-DC
Consumer
Logicae gradu interpretes
Potentia MOSFET porta rectoribus
Alia applicationes commutatione

Specifications

Productum attributum	Precium attributum
Fabrica:	Infineon
Product Category:	MOSFET
RoHS:	Singula
Technologia:	Si
Adscendens Style:	SMD/SMT
Sarcina / Case:	TO-252-3
Transistor Polarity:	P-Channel
Numerus canalium:	1 Channel
Vds - Drain-Source Naufragii intentione:	30 V
Id - Continua Exhaurire Current:	70 A
Rds De - Drain-Source Resistentia:	3.5 mOhms
Vgs - Porta-Source intentione:	- 20 V, + 20 V
Vgs th.	2 V
Qg - porta præcipe:	175 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Potentia dissipatio:	150 W
Channel Modus:	Enhancement
Nomen:	OPTIMOS'
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Notam:	Infineon Technologies
Configurationis:	Unius
Fall tempus:	22 ns
Transconductance - Min:	65 S
Height:	2.3 mm
Longitudo;	6.5 mm
Product Type:	MOSFET
Tempus surge:	167 ns .
Series:	OPTIMOS P3
Factory Pack Quantity:	2500
Subcategoria:	MOSFETs
Transistor Type:	1 P-Channel
Typical Turn-Off mora Tempus:	89 ns
Typical Turn-De mora Tempus:	21 ns
Latitudo:	6.22 mm
Pars # Aliases:	IPD42P3L3GXT SP000473922 IPD042P03L3GBTMA1
Unitas pondus:	0.011640 oz